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HL6313G

Hitachi Semiconductor

(HL6312G / HL6313G) AlGaInP Laser Diodes

www.DataSheet4U.com HL6312/13G AlGaInP Laser Diodes Description The HL6312/13G are 0.63 µm band AlGaInP laser diodes w...


Hitachi Semiconductor

HL6313G

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Description
www.DataSheet4U.com HL6312/13G AlGaInP Laser Diodes Description The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types of optical equipment. Hermetic sealing of the package achieves high reliability. Features Visible light output: λp = 635 nm Typ (nearly equal to He-Ne Gas Laser) Optical output power: 5 mW CW Low Operating voltage: 2.7 V Max Single longitudinal mode Built-in photodiode for monitoring laser output 99 www.DataSheet4U.com HL6312/13G Absolute Maximum Ratings (TC = 25°C) Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Note: Symbol PO PO (pulse) VR (LD) VR (PD) Topr Tstg Rated Value 5 6* 2 30 –10 to +50 –40 to +85 1 Unit mW mW V V °C °C 1. Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50% Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Threshold current Operating current Operating voltage Lasing wavelength Beam divergence (parallel) Beam divergence (perpendicular) Monitor current Symbol PO Ith Iop Vop λp θ// θ⊥ Is Min 5 20 — — 625 5 25 0.2 Typ — 45 55 — 635 8 31 0.4 Max — 70 85 2.7 640 11 37 0.8 Unit mW mA mA V nm deg. deg. mA PO = 5 mW PO = 5 mW PO = 5 mW PO = 5 mW PO = 5 mW PO = 5 mW, VR = 5 V Test Conditions Kink free 100 www.DataSheet4U.com HL6312/13G Typ...




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