www.DataSheet4U.com
Product Description
Stanford Microdevices’ SLN-186 is a high performance gallium arsenide heterojun...
www.DataSheet4U.com
Product Description
Stanford Microdevices’ SLN-186 is a high performance gallium arsenide heterojunction bipolar
transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-4.0 GHz. The SLN-186 needs only 2 DC-blocking capacitors and a bias resistor for operation. Noise figure may be optimized by using 2-element matching at the input to yield <2.0dB noise figure. This 50 Ohm LNA requires only a single supply voltage and draws only 8mA. For broadband applications, it may be biased at 6mA with minimal effect on noise figure and gain. The SLN-186 is available in tape and reel at 1000, 3000 and 5000 devices per reel.
SLN-186
DC-4.0 GHz, 3.5 Volt 50 Ohm LNA MMIC Amplifier
Product Features Patented, Reliable GaAs HBT Technology Low Noise Figure: 2.0dB from 0.1 to 1.5 GHz High Associated Gain: 22dB Typ. at 2.0 GHz True 50 Ohm MMIC : No External Matching
Required
Noise Figure vs. Frequency
3
Low Current Draw : Only 8mA Low Cost Surface Mount Plastic Package Applications AMPS, PCS, DECT, Handsets Tri-Band & Broadband Receivers
Low Noise MMICs
2.5
6 mA
dB
2
8 mA
1.5 0.1
0.5
1
1.5
2
2.5
3
3.5
4
GHz
Electrical Specifications at Ta = 25C
S ym b ol P a r a m e t e r s : T e s t C o n d i t io n s U n its M in . Ty p . M ax.
NF 50 Ohm S 21 VSW R NF 50 Ohm S 21 VSW R
N o is e F ig u re in 5 0 O h m s : V d s = 3 .5 V, I d s = 8 m A 5 0 O h m G a in : V d s = ...