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BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS
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Designed for Complementary Use with BD645, BD647, BD649 and BD651 62.5 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A
B C E
TO-220 PACKAGE (TOP VIEW)
1 2 3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING BD646 Collector-base voltage (IE = 0) BD648 BD650 BD652 BD646 Collector-emitter voltage (IB = 0) BD648 BD650 BD652 Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL VCEO V CBO SYMBOL VALUE -80 -100 -120 -140 -60 -80 -100 -120 -5 -8 -12 -0.3 62.5 2 50 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
PRODUCT
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INFORMATION
1
MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD646 V(BR)CEO IC = -30 mA IB = 0 (see Note 5) BD648 BD650 BD652 VCE = -30 V ICEO Collector-emitter cut-off current VCE = -40 V VCE = -50 V VCE = -60 V VCB = -60 V VCB = -80 V VCB = -100 V ICBO Collector cut-off current VCB = -120 V VCB = -40 V VCB = -50 V VCB = -60 V VCB = -70 V IEBO hFE VCE(sat) VBE(sat) VBE(on) Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage VEB = VCE = IB = IB = IB = VCE = -5 V -3 V -12 mA -50 mA -50 mA -3 V IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = IC = IC = IC = IC = -3 A -3 A -5 A -5 A -3 A TC = 150°C TC = 150°C TC = 150°C TC = 150°C (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 750 -2 -2.5 -3 -2.5 V V V BD646 BD648 BD650 BD652 BD646 BD648 BD650 BD652 BD646 BD648 BD650 BD652 MIN -60 -80 -100 -120 -0.5 -0.5 -0.5 -0.5 -0.2 -0.2 -0.2 -0.2 -2.0 -2.0 -2.0 -2.0 -5 mA mA mA V TYP MAX UNIT
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300.