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BD646 Dataheets PDF



Part Number BD646
Manufacturers Bourns Electronic Solutions
Logo Bourns Electronic Solutions
Description PNP SILICON POWER DARLINGTONS
Datasheet BD646 DatasheetBD646 Datasheet (PDF)

www.DataSheet4U.com BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 62.5 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD646 Collector-base voltage (IE = 0) BD648 BD650 BD652 BD646 Co.

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www.DataSheet4U.com BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 62.5 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD646 Collector-base voltage (IE = 0) BD648 BD650 BD652 BD646 Collector-emitter voltage (IB = 0) BD648 BD650 BD652 Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL VCEO V CBO SYMBOL VALUE -80 -100 -120 -140 -60 -80 -100 -120 -5 -8 -12 -0.3 62.5 2 50 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. PRODUCT DataSheet 4 U .com INFORMATION 1 MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD646 V(BR)CEO IC = -30 mA IB = 0 (see Note 5) BD648 BD650 BD652 VCE = -30 V ICEO Collector-emitter cut-off current VCE = -40 V VCE = -50 V VCE = -60 V VCB = -60 V VCB = -80 V VCB = -100 V ICBO Collector cut-off current VCB = -120 V VCB = -40 V VCB = -50 V VCB = -60 V VCB = -70 V IEBO hFE VCE(sat) VBE(sat) VBE(on) Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage VEB = VCE = IB = IB = IB = VCE = -5 V -3 V -12 mA -50 mA -50 mA -3 V IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = IC = IC = IC = IC = -3 A -3 A -5 A -5 A -3 A TC = 150°C TC = 150°C TC = 150°C TC = 150°C (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 750 -2 -2.5 -3 -2.5 V V V BD646 BD648 BD650 BD652 BD646 BD648 BD650 BD652 BD646 BD648 BD650 BD652 MIN -60 -80 -100 -120 -0.5 -0.5 -0.5 -0.5 -0.2 -0.2 -0.2 -0.2 -2.0 -2.0 -2.0 -2.0 -5 mA mA mA V TYP MAX UNIT NOTES: 5. These parameters must be measured using pulse techniques, tp = 300.


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