256K x 16 DYNAMIC RAM EDO PAGE MODE
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TE CH
T224162B
DRAM
256K x 16 DYNAMIC RAM
EDO PAGE MODE
FEATURES
• Industry-standard x 16 ...
Description
www.DataSheet4U.com
tm
TE CH
T224162B
DRAM
256K x 16 DYNAMIC RAM
EDO PAGE MODE
FEATURES
Industry-standard x 16 pinouts and timing functions. Single 5V (±10%) power supply. All device pins are TTL- compatible. 512-cycle refresh in 8ms. Refresh modes: RAS only, CAS BEFORE RAS (CBR) and HIDDEN. Extended data-out (EDO) PAGE MODE access cycle. BYTE WRITE and BYTE READ access cycles.
PIN ASSIGNMENT ( Top View )
Vcc I/01 I/02 I/03 I/04 Vcc I/05 I/06 I/07 I/08 1 2 3 4 5 6 7 8 9 10 TSOP(II) NC NC 11 12 13 14 15 16 17 18 19 20 30 29 28 27 26 25 24 23 22 21 NC CASL CASH OE A8 A7 A6 A5 A4 VSS 40 39 38 37 36 35 34 33 32 31 Vss I/016 I/015 I/014 I/013 Vss I/012 I/011 I/010 I/09
OPTION
TIMING
22ns 25ns 28ns 35ns 45ns 50ns
EDO
125 MHz 100 MHz 100 MHz 83 MHz 60 MHz 50 MHz MARKING J S
MARKING
-22 -25 -28 -35 -45 -50
WE RAS NC A0 A1 A2 A3 Vcc
PACKAGE
SOJ TSOP(II)
GENERAL DESCRIPTION
The T224162B is a randomly accessed solid state memory containing 4,194,304 bits organized in a x16 configuration. The T224162B has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. It offers Fast Page mode with Extended Data Output. The T224162B CAS function and timing are determined by the first CAS to transition low and by the last to transition back high. Use only one of the two CAS and leave the other staying high during WRITE will result in a BYTE WRITE. CASL transiting low in a WRITE cycle will write data into the lower byte (IO1~IO8), and CASH transiting low will writ...
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