SBFP540D

www.DataSheet4U.com Ordering number : ENN7412 SBFP540D NPN Epitaxial Planar Silicon Transistor SBFP540D UHF to C Band Low Noise Amplifier, Oscillation Applications Features Package Dimensions 3 0.05 4 0.6 1.0 2 1 0.3 (Bottom View) 0.3 Low noise : NF=0.9dB typ (f=1.8GHz). unit : mm High cutoff frequency : fT=20GHz typ(VCE=1V). 2215 High cutoff frequency : fT=29GHz typ(VCE=4V). Low voltage operation. High gain :S21e2=17.5dB typ (VCE=1V, f=1.8GHz). 0.2 High gain :S21e2=18.5dB typ (VCE=2V, f=1.8GHz). 0.05 [SBFP540D] 0.5 0.05 0.2 0.05 1 : Base 2 : Emitter 3 : Collector 4 : Emitter SANYO : ECSP1008-4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 0.8 0.6 Ratings 14 4.5 1 80 100 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT1 fT2 Cre 2 S21e 1 2 S21e 2 Conditions VCB=5V, IE=0 VEB=1V, IC=0 VCE=3.5V, IC=20mA VCE=1V, IC=10mA VCE=4V, IC=50mA VCB=1V, f=1MHz VCE=1V, IC=10mA, f=1.8GHz VCE=2V, IC=20mA, f=1.8GHz VCE=2V, IC=5mA, f=1.8GHz Ratings min typ max 200 70 50 20 22 29 0.15 17.5 16 18.5 0.9 1.3 0.25 200 Unit nA µA GH...