H9435S

www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 H9435S P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features RDS(on)=60mΩ@VGS=-10V, ID=-5.3A RDS(on)=90mΩ@VGS=-4.5V, ID=-4.2A Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID IDM PD Tj, Tstg RθJC RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 Parameter Ratings -30 ±20 -5.3 -20 2.5 -55 to +150 30 *2 Units V V A A W °C °C/W °C/W Total Power Dissipation @TA=25oC Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient (PCB mounted) 50 *1: Maximum DC current limited by the package *2: 1-in2 2oz Cu PCB board H9435S HSMC Product Specification DataSheet 4 U .com www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Static BVDSS RDS(on) VGS(th) IDSS IGSS gFS Dynamic Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output...