N-Channel 30-V (D-S) MOSFET
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Si7358DP
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V...
Description
www.DataSheet4U.com
Si7358DP
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.00525 @ VGS = 10 V 0.007 @ VGS = 4.5 V
ID (A)
23 20
D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile
APPLICATIONS
D DC/DC Converters D Synchronous Rectifiers
PowerPAKt SO-8
D 6.15 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
5.15 mm
G
S N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
30 "20 23
Steady State
Unit
V
14 11 60 A 1.6 1.9 1.2 –55 to 150 W _C
ID IDM IS PD TJ, Tstg
18
4.5 5.4 3.4
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71882 S-20951—Rev. A, 01-Jul-02 www.vishay.com Steady State Steady State RthJA RthJC
Symbol
Typical
18 50 1.0
Maximum
23 65 1.5
Unit
_C/W
1
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Si7358DP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-...
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