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NLAS3799B

ON Semiconductor

Dual DPDT Ultra Low RON Switch

NLAS3799B, NLAS3799BL Dual DPDT Ultra-Low RON Switch The NLAS3799B is an ultra−low RON dual DPDT and a 0.5 W RON analog...


ON Semiconductor

NLAS3799B

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Description
NLAS3799B, NLAS3799BL Dual DPDT Ultra-Low RON Switch The NLAS3799B is an ultra−low RON dual DPDT and a 0.5 W RON analog switch. This device is designed for low operating voltage, high current switching of speaker output and earpiece for cellphone applications. It can switch a balanced stereo output. The NLAS3799B can handle a balanced microphone/speaker/ring−tone generator in a monophone mode. The device contains a break−before−make (BBM) feature. Features Single Supply Operation 1.65 to 4.5 V VCC Function Directly from LiON Battery Maximum Breakdown Voltage: 5.5 V Low Static Power NLAS3799B Interfaces with 2.8 V Chipset NLAS3799BL Interfaces with 1.8 V Chipset These are Pb−Free Devices Typical Applications Cell Phone Speaker/Microphone Switching Ringtone−Chip/Amplifier Switching Four Unbalanced (Single−Ended) Switches Stereo Balanced (Push−Pull) Switching Important Information ESD Protection: Human Body Model (HBM) > 8000 V Mach...




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