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2SK3497
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3497
High Power Amplifier Application
Unit: mm High breakdown voltage: VDSS = 180V Complementary to 2SJ618
Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Gate−source voltage Drain current DC (Note ) Symbol VDSS VGSS ID IDP PD Tch Tstg Ratin...
