Ultrahigh-Speed Switching Applications
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Ordering number : ENN6666
5LP01S
P-Channel Silicon MOSFET
5LP01S
Ultrahigh-Speed Switching Applica...
Description
www.DataSheet4U.com
Ordering number : ENN6666
5LP01S
P-Channel Silicon MOSFET
5LP01S
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2124
[5LP01S]
0.3 3
0.8 1.6
Low ON-resistance. Ultrahigh-Speed Switching. 2.5V drive.
0.75 0.6 0 to 0.1
0.2
1
2
0.4
0.4
0.5 0.5 1.6
0.1max
0.1
1 : Gate 2 : Source 3 : Drain SANYO : SMCP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -50 ±10 --0.07 --0.28 0.15 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-50V, VGS=0 VGS=±8V, VDS=0 VDS=-10V, ID=--100µA VDS=-10V, ID=--40mA Ratings min --50 10 ±10 --0.4 70 100 --1.4 typ max Unit V µA µA V mS
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult w...
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