XP04115

www.DataSheet4U.com Composite Transistors XP04115 (XP4115) Silicon PNP epitaxial planer transistor Unit: mm (0.425) For switching/digital circuits 0.2±0.05 0.12+0.05 –0.02 1 2 3 q (0.65) (0.65) 1.3±0.1 2.0±0.1 10° s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 150 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 SMini6-G1 Package Marking Symbol: 6T Internal Connection 1 2 3 Tr1 6 5 4 0 to 0.1 q UNR1115(UN1115) × 2 elements Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VEB = –6V, IC = 0 VCE = –10V, IC = –5mA IC = –10mA, IB = – 0.3mA VCC = –5V, VB = – 0.5V, RL = 1kΩ VCC = –5V, VB = –2.5V, RL = 1kΩ VCB = –10V, IE = 1mA, f = 200MHz –30% 80 10 +30% –4.9 – 0.2 160 min –50 –50 – 0.1 – 0.5 – 0.01 460 – 0.25 V V V MHz kΩ typ max Unit V V µA µ...