MHL9236N

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MHL9236N Rev. 8, 8/2006 Cellular Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as TDMA, CDMA or QPSK. Third Order Intercept: 47 dBm Typ Power Gain: 30.5 dB Typ (@ f = 880 MHz) Input and Output VSWR v 1.5:1 Features Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications For Use in TDMA, CDMA, QPSK or Analog Systems N Suffix Indicates Lead - Free Terminations MHL9236N 800 - 960 MHz 2.5 W, 30.5 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP - 02, STYLE 1 Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +10 - 40 to +100 - 20 to +100 Unit Vdc dBm °C °C Table 2. Electrical Characteristics (VDD = 26 Vdc, TC = 25°C; 50 Ω System) Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Compression (f = 880 MHz) (f = 800 - 960 MHz) (f = 880 MHz) Symbol IDD Gp GF P1dB ITO NF Min — 29 — 33 46 — Typ 550 30.5 0.1 34 47 3.5 Max 620 32 0.3 — — 4.5 Unit mA dB dB dBm dBm dB Thi...