Power Transistors
2SC5914
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
Unit...
Power
Transistors
2SC5914
Silicon
NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
Unit: mm
■ Features
15.5±0.5 φ 3.2±0.1 5˚
3.0±0.3 5˚
(4.5)
26.5±0.5 (2.0)
(1.2) (10.0)
(23.4) 22.0±0.5
High breakdown voltage: VCBO ≥ 1 500 V
High-speed switching: tf < 200 ns
Wide safe operation area
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
/ Collector-base voltage (Emitter open) VCBO
1 500
18.6±0.5 (2.0)
Solder Dip
V
5.45±0.3
e Collector-emitter voltage (E-B short) VCES
1 500
V
c type) Collector-emitter voltage (Base open) VCEO
600
3.3±0.3
5.5±0.3
V
n d ge. ed Emitter-base voltage (Collector open) VEBO
7
(2.0)
V
le sta ntinu Base current
IB
5
A
a e cyc isco Collector current
IC
12
A
life d, d Peak collector current *
ICP
22
A
n u duct type Collector power dissipation
PC
40
W
te tin Pro ued Ta=25°C
3
four ntin Junction temperature
Tj
150
°C
wing disco Storage temperature
Tstg −55 to +150 °C
in n follo ned Note) *: Non-repetitive peak collector current
10.9±0.5
5˚ 12 3
1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package
Internal Connection
C B
E
Ma isco/Discontimnuaeindteinncalnucdeestype, pla ■ Electrical Characteristics TC = 25°C ± 3°C
ce pe, Parameter
Symbol
Conditions
D tenan ce ty Collector-base cutoff current (Emitter open) ICBO
Mainaintenan Emitter-base cut-off current (Collector open) d m Forward current...
