MT28F1284W18

www.DataSheet4U.com 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY Features Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm (FPA) for fast PROGRAM operation 16-word page Flexible 8Mb multipartition architecture Single word (16-bit) data bus Support for true concurrent operation with zero latency Basic configuration: 135 individually programmable/erasable blocks 16 partitions (8Mb each for code and data storage) Operating Voltage VCC = 1.70V (MIN)–1.95V (MAX) VCCQ = 1.70V (MIN)–2.24V (MAX) VPP = 1.8V (TYP) for in-system PROGRAM/ERASE 12V ±5% (HV) VPP tolerant (factory programming compatibility) Random access time: 60ns @ 1.70V VCC Burst mode read access MAX clock rate: 66 MHz (tCLK = 15ns) MAX clock rate: 54 MHz (tCLK = 18.5ns) Burst latency 60ns @1.70V VCC and 66 MHz 4 word, 8 word, 16 word, and continuous burst modes tACLK: 14ns @ 1.70V VCC and 54 MHz tACLK: 11ns @ 1.70V VCC and 66 MHz Page mode read access Interpage read access: 60ns @ 1.70V VCC Intrapage read access: 15ns @ 1.70V VCC Low power consumption (VCC = 1.95V) Burst read @ 66 MHz <10mA (TYP) Standby < 50µA(TYP) Automatic power save (APS) Enhanced program and erase suspend options ERASE-SUSPEND-to-READ within same partition PROGRAM-SUSPEND-to-READ within same partition ERASE-SUSPEND-to-PROGRAM within same partition Dual 64-bit chip protection registers for security purposes Cross-compatible comman...