FDFMA2P853

FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFMA2P853 July 2014 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal perfo rmance for it's physlicsaize and is well suited to linear mode applications. Features MOSFET: „ -3.0 A, -20V. RDS(ON) = 120 m: @ VGS = -4.5 V RDS(ON) = 160 m: @ VGS = -2.5 V RDS(ON) = 240 m: @ VGS = -1.8 V Schottky: VF < 0.46 V @ 500 mA „ Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm „ RoHS Compliant A NC D C D A1 NC 2 D3 MicroFET C G S Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID Parameter MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current -Continuous -Pulsed (Note 1a) VRRM IO PD Schottky Repetitive Peak Reverse voltage Schottky Average Forward Current Power dissipation for Single Operation Power dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RTJA RTJA RTJA RTJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junct...