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STPS8H100

ST Microelectronics

High voltage power Schottky rectifier

STPS8H100 High voltage power Schottky rectifier Datasheet - production data A K K K A TO-220AC K A NC A NC D2PAK...


ST Microelectronics

STPS8H100

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STPS8H100 High voltage power Schottky rectifier Datasheet - production data A K K K A TO-220AC K A NC A NC D2PAK TO-220FPAC A K Features  Negligible switching losses  High junction temperature capability  Low leakage current  Good trade off between leakage current and forward voltage drop  Insulated package:  TO-220FPAC, insulating voltage = 2000 VRMS sine  Avalanche capability specified  ECOPACK®2 compliant component for D²PAK on demand Description Schottky barrier rectifier designed for high frequency compact switched mode power supplies such as adaptors and on-board DC-DC converters. Table 1: Device summary Symbol Value IF(AV) VRRM Tj (max) VF (typ) 8A 100 V 175 °C 0.56 V December 2015 DocID5387 Rev 12 This is information on a product in full production. 1/14 www.st.com Characteristics STPS8H100 1 Characteristics Table 2: Absolute ratings (limiting values, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj Repetitive peak reverse voltage Forward rms current Average forward current δ = 0.5, square wave TO-220AC, D2PAK TO-220FPAC TC = 165 °C TC = 150 °C Surge non repetitive forward current tp = 10 ms sinusoidal Repetitive peak avalanche power tp = 10 µs, Tj= 125 °C Storage temperature range Maximum operating junction temperature (1) 100 V 30 A 8A 250 A 750 -65 to + 175 + 175 W °C °C Notes: (1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on i...




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