IRHNJ67130

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-95816E IRHNJ67130 JANSR2N7587U3 100V, N-CHANNEL REF: MIL-PRF-19500/746 R6 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67130 100 kRads(Si) IRHNJ63130 300 kRads(Si) RDS(on) 0.042 0.042 ID 22A* 22A* QPL Part Number JANSR2N7587U3 JANSF2N7587U3 SMD-0.5 Description IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. Features  Low RDS(on)  Fast Switching  Single Event Effect (SEE) Hardened  Low Total Gate Charge  Simple Drive Requirements  Hermetically Sealed  Ceramic Package  Surface Mount  ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current IDM @ TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Ga...