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2SK2595

Renesas Technology
Part Number 2SK2595
Manufacturer Renesas Technology
Description Silicon N-Channel MOSFET
Published Oct 18, 2006
Detailed Description www.DataSheet4U.com 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0300 Rev.3.00 Aug.26.2004 Feature...
Datasheet PDF File 2SK2595 PDF File

2SK2595
2SK2595

Overview
www.
DataSheet4U.
com 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0300 Rev.
3.
00 Aug.
26.
2004 Features • High power output, High gain, High efficiency PG = 7.
8 dB, Pout = 5.
37 W, ηD = 50% min.
(f = 836.
5 MHz) • Compact package capable of surface mounting Outline RP8P D G 1 3 2 S 1.
Gate 2.
Source 3.
Drain Note: Marking is "AX".
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C Sym...


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