MS1409

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1409 RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS Features 175 MHz 28 VOLTS POUT = 2.5 W GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter 2. Base 3. Collector DESCRIPTION: The MS1409 is a NPN silicon transistor designed for high power gain VHF and UHF communication applications. Gold metalization and diffused emitter ballast resistors provide superior long term reliability. TO-39 ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol VCBO VCEO VEBO PDISS IC TJ TSTG Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Total Power Dissipation Collector Peak Current Junction Temperature Storage Temperature Value 65 40 4.0 7.0 1.0 200 -65 to 200 Unit V V V W A ºC ºC Thermal Data RTH(J-CASE) Thermal Resistance Junction-case 25 °C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DataSheet 4 U .com www.DataSheet4U.com MS1409 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol BVebo BVcbo BVceo Iceo HFE IE = 0.10 mA IC = 0.3 mA IC = 3 mA VCE = 30 V VCE = 5 V Test Conditions IC = 0 mA IE = 0 mA IS = 0 mA IC = 100 mA Min. 4.0 65 40 --20 Value Typ. ----------- Max. ------0.1 200 Unit V V V mA B DYNAMIC Symbol POUT f =175 MHz f =175 MHz f =175 MHz f =1.0MHz Test Co...