XN01501

www.DataSheet4U.com Composite Transistors XN01501 (XN1501) Silicon NPN epitaxial planar type Unit: mm For general amplification ■ Features Two elements incorporated into one package (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half 3 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 0.30+0.10 –0.05 10˚ 1 ■ Basic Part Number 2SD0601A (2SD601A) × 2 1.1+0.2 –0.1 0.65±0.15 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 60 50 7 100 200 300 150 −55 to +150 Unit V V V mA mA mW °C °C Tr2 1: Collector (Tr1) 2: Collector (Tr2) 3: Base (Tr2) EIAJ: SC-74A 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 4: Emitter 5: Base (Tr1) Mini5-G1 Package Marking Symbol: 5R Internal Connection 3 4 5 1.1+0.3 –0.1 Tr1 2 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio hFE ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICE...