PBSS301ND

www.DataSheet4U.com PBSS301ND 20 V, 4 A NPN low VCEsat (BISS) transistor Rev. 02 — 25 April 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS301PD. 1.2 Features s s s s s Very low collector-emitter saturation resistance Ultra low collector-emitter saturation voltage 4 A continuous collector current Up to 15 A peak current High efficiency due to less heat generation 1.3 Applications s s s s s s Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1: Symbol VCEO IC ICM RCEsat [1] [2] Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 4 A; IB = 400 mA [2] Conditions open base [1] Min - Typ 50 Max 20 4 15 70 Unit V A A mΩ Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. DataSheet 4 U .com www.DataSheet4U.com Philips Semiconductors PBSS301ND 20 V, 4 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter collector collector 1 2 3 6 5 4 3 4 sym014 Simplified outline Symbol 1, 2, 5, 6 3. Ordering information Table 3: Ord...