PBSS2540M

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor Product specification 2003 Jul 22 DataSheet 4 U .com www.DataSheet4U.com Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor FEATURES Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to reduced heat generation Reduced printed-circuit board requirements. APPLICATIONS Power management: – DC-DC converter – Supply line switching – Battery charger – LCD backlighting. Peripheral driver: – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load drivers (e.g. relays, buzzers and motors). handbook, halfpage PBSS2540M QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 40 500 1 <500 UNIT V mA A mΩ 3 3 1 2 DESCRIPTION Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. MARKING TYPE NUMBER PBSS2540M MARKING CODE DC 2 1 Bottom view MAM475 Fig.1 Simplified outline (SOT883) and symbol. 2003 Jul 22 2 DataSheet 4 U .com www.DataSheet4U.com Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (...