MA2SD32

www.DataSheet4U.com Schottky Barrier Diodes (SBD) MA2SD32 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features IF(AV) = 200 mA rectification is possible. Small reverse current: IR < 5 µA (at VR = 30 V) 0.80±0.05 0.60+0.05 –0.03 0.80+0.05 –0.03 1 (0.60) 0.12+0.05 –0.02 (0.80) (0.60) 0.01±0.01 5˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg Rating 30 30 200 300 1 125 −55 to +125 Unit V V 5˚ 2 0.30±0.05 0+0 –0.05 0.01±0.01 mA mA A °C °C 1: Anode 2: Cathode SSMini2-F1 Package Marking Symbol: 8H Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current Symbol IR1 IR2 Forward voltage Terminal capacitance Reverse recovery time * VF Ct trr VR = 10 V VR = 30 V IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 0.49 25 2 Conditions Min Typ Max 0.5 5 0.56 V pF ns Unit µA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output ...