RADIATION GARDENED POWER MOSFET
RADIATION HARDENED POWER MOSFET THRU-HOLE TO-205AF (TO-39)
Product Summary
Part Number Radiation Level IRHF57230 100 kR...
Description
RADIATION HARDENED POWER MOSFET THRU-HOLE TO-205AF (TO-39)
Product Summary
Part Number Radiation Level IRHF57230 100 kRads(Si) IRHF53230 300 kRads(Si) IRHF54230 600 kRads(Si) IRHF58230 1000 kRads(Si)
RDS(on) 0.22 0.22 0.22 0.275
ID 7.3A 7.3A 7.3A 7.3A
Description
IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters.
PD-93788B
IRHF57230
200V, N-CHANNEL
R5 TECHNOLOGY
TO-39
Features
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Hermetically Sealed ESD Rating: Class 1A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
Parameter
Value
Pre-Irradiation
Units
ID1 @ VGS = 12V, TC = 25°C ID2 @ VGS = 12V, TC = 100°C
IDM @ TC = 25°C PD @ TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Continuous Drain Current
Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse...
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