STB10NC50-1

www.DataSheet4U.com ® STB10NC50-1 N - CHANNEL 500V - 0.48Ω - 10A - I2PAK/D2PAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STB10NC50-1 s s s s s V DSS 500 V R DS(on) < 0.52 Ω ID 10 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 12 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( ) P tot dv/dt( 1 ) Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction T emperature o o I2PAK D2PAK INTERNAL SCHEMATIC DIAGRAM Value 500 500 ± 30 10 6.3 40 135 1.08 3 -65 to 150 150 ( 1) ISD ≤ 10 A, di/dt ≤100 A/µs, VDD ≤ V(BR)DSS, Tj ...