STB10NB50

www.DataSheet4U.com ® STB10NB50 N - CHANNEL 500V - 0.55Ω - 10.6A - D2PAK PowerMESH™ MOSFET TYPE ST B10NB50 s s s s s s V DSS 500 V R DS( on ) < 0.60 Ω ID 10.6 A TYPICAL RDS(on) = 0.55 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL 3 1 D2PAK TO-263 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID ID I DM ( ) P tot dv/dt( 1) T s tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at T c = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. Operating Junction T emperature o INTERNAL SCHEMATIC DIAGRAM Value 500 500 ± 30 10.6 6.4 42.4 135 1.08 4.5 -65 to 150 150 ( 1) ISD ≤ 10.6A, di/d...