RADIATION HARDENED POWER MOSFET
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PD-93752C
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radi...
Description
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PD-93752C
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level IRHNJ57034 100K Rads (Si) IRHNJ53034 300K Rads (Si) IRHNJ54034 600K Rads (Si) IRHNJ58034 1000K Rads (Si) RDS(on) 0.030Ω 0.030Ω 0.030Ω 0.038Ω
IRHNJ57034 JANSR2N7480U3 60V, N-CHANNEL
REF: MIL-PRF-19500/703
5
TECHNOLOGY
ID QPL Part Number 22A* JANSR2N7480U3 22A* JANSF2N7480U3 22A* JANSG2N7480U3 22A* JANSH2N7480U3
SMD-0.5
International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor G...
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