N-CHANNEL MOSFET
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PD - 93820
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Rad...
Description
www.DataSheet4U.com
PD - 93820
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level IRHNJ7130 100K Rads (Si) IRHNJ3130 300K Rads (Si) IRHNJ4130 600K Rads (Si) IRHNJ8130 1000K Rads (Si) RDS(on) 0.18Ω 0.18Ω 0.18Ω 0.18Ω ID 14.4A 14.4A 14.4A 14.4A
IRHNJ7130 100V, N-CHANNEL
RAD-Hard HEXFET MOSFET TECHNOLOGY
™ ®
SMD-0.5
International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor...
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