IRHNB8160

www.DataSheet4U.com PD - 91795A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) Product Summary Part Number IRHNB7160 IRHNB3160 IRHNB4160 IRHNB8160 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.040Ω 0.040Ω 0.040Ω 0.040Ω HEXFET® ID 51A 51A 51A 51A IRHNB7160 100V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® SMD-3 International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: ! ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Si...