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IRHN9150

International Rectifier
Part Number IRHN9150
Manufacturer International Rectifier
Description P-CHANNEL TRANSISTOR
Published Oct 15, 2006
Detailed Description com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.885 REPETITIVE AVALANCHE...
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IRHN9150
IRHN9150

Overview
com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No.
PD-9.
885 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR -100 Volt, 0.
120Ω , RAD HARD HEXFET International Rectifier’s P-channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si).
Under identical pre- and post-radiation test conditions, International Rectifier’s P-channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose.
No compensation in gate drive circuitry is required.
These devices are also capable of surviving transient ionization pul...


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