DatasheetsPDF.com

IRHN7250

International Rectifier

Radiation Hardened Power MOSFET

IRHN7250 (JANSR2N7269U) Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Tec...


International Rectifier

IRHN7250

File DownloadDownload IRHN7250 Datasheet


Description
IRHN7250 (JANSR2N7269U) Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology PD-90679L Features  Single event effect (SEE) hardened  Low RDS(on)  Low total gate charge  Simple drive requirements  Hermetically sealed  Electrically isolated  Ceramic eyelets  Light weight  Surface Mount  ESD rating: Class 3A per MIL-STD-750, Method 1020 Product Summary  BVDSS: 200V  ID : 26A  RDS(on),max : 100m (100 krad(Si))  QG,max : 170nC  REF: MIL-PRF-19500/603 Potential Applications  DC-DC converter  Motor drives SMD-1 Product Validation Qualified to JANS screening flow according to MIL-PRF-19500 for space applications Description IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. Ordering Information Table 1 Ordering options Part number Package IRHN7250 SMD-1 JANSR2N7269U SMD-1 IRHN3250 SMD-1 JANSF2N7269U SMD-1 IRHN4250 SMD-1 JANSG2N7269U SMD-1 Screening L...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)