Radiation Hardened Power MOSFET
IRHN7250 (JANSR2N7269U)
Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Tec...
Description
IRHN7250 (JANSR2N7269U)
Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology
PD-90679L
Features
Single event effect (SEE) hardened Low RDS(on) Low total gate charge Simple drive requirements Hermetically sealed Electrically isolated Ceramic eyelets Light weight Surface Mount ESD rating: Class 3A per MIL-STD-750, Method 1020
Product Summary
BVDSS: 200V ID : 26A RDS(on),max : 100m (100 krad(Si)) QG,max : 170nC REF: MIL-PRF-19500/603
Potential Applications
DC-DC converter Motor drives
SMD-1
Product Validation
Qualified to JANS screening flow according to MIL-PRF-19500 for space applications
Description
IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters.
Ordering Information
Table 1
Ordering options
Part number
Package
IRHN7250
SMD-1
JANSR2N7269U
SMD-1
IRHN3250
SMD-1
JANSF2N7269U
SMD-1
IRHN4250
SMD-1
JANSG2N7269U
SMD-1
Screening L...
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