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IRHN7130 Dataheets PDF



Part Number IRHN7130
Manufacturers International Rectifier
Logo International Rectifier
Description Radiation Hardened Power MOSFET
Datasheet IRHN7130 DatasheetIRHN7130 Datasheet (PDF)

IRHN7130 Radiation Hardened Power MOSFET Surface-Mount (SMD-1) 100V, 14A, N-channel, Rad Hard HEXFET™ Technology PD-90821D Features  Single event effect (SEE) hardened  Low RDS(on)  Low total gate charge  Proton tolerant  Simple drive requirements  Hermetically sealed  Ceramic package  Light weight  ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary  BVDSS: 100V  ID : 14A  RDS(on),max : 180m  QG,max : 45nC Potential Applications  DC-DC converter  Motor drives .

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IRHN7130 Radiation Hardened Power MOSFET Surface-Mount (SMD-1) 100V, 14A, N-channel, Rad Hard HEXFET™ Technology PD-90821D Features  Single event effect (SEE) hardened  Low RDS(on)  Low total gate charge  Proton tolerant  Simple drive requirements  Hermetically sealed  Ceramic package  Light weight  ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary  BVDSS: 100V  ID : 14A  RDS(on),max : 180m  QG,max : 45nC Potential Applications  DC-DC converter  Motor drives SMD-1 Product Validation Qualified according to MIL-PRF-19500 for space applications Description IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. Ordering Information Table 1 Ordering options Part number Package IRHN7130 SMD-1 IRHN3130 SMD-1 IRHN4130 SMD-1 Screening Level COTS COTS COTS TID Level 100 krad(Si) 300 krad(Si) 500 krad(Si) Please read the Important Notice and Warnings at the end of this document www.infineon.com/irhirel page 1 of 13 2022-05-24 IRHN7130 Radiation Hardened Power MOSFET Surface Mount (SMD-1) Table of contents Table of contents Features ........................................................................................................................................ 1 Potential Applications..................................................................................................................... 1 Product Validation .......................................................................................................................... 1 Description .................................................................................................................................... 1 Ordering Information...................................................................................................................... 1 Table of contents ............................................................................................................................ 2 1 Absolute Maximum Ratings ..................................................................................................... 3 2 Device Characteristics ............................................................................................................ 4 2.1 Electrical Characteristics (Pre-Irradiation).............................................................................................4 2.2 Source-Drain Diode Ratings and Characteristics (Pre-Irradiation) ....................................................... 5 2.3 Thermal Characteristics .......................................................................................................................... 5 2.4 Radiation Characteristics........................................................................................................................5 2.4.1 Electrical Characteristics — Post Total Dose Irradiation .................................................................. 5 2.4.2 Single Event Effects — Safe Operating Area......................................................................................6 3 Electrical Characteristics Curves (Pre-irradiation) ..................................................................... 7 4 Test Circuits (Pre-irradiation) .................................................................................................10 5 Package Outline....................................................................................................................11 Revision history.............................................................................................................................12 2 of 13 2022-05-24 IRHN7130 Radiation Hardened Power MOSFET Surface Mount (SMD-1) Absolute Maximum Ratings 1 Absolute Maximum Ratings Table 2 Absolute Maximum Ratings (Pre-Irradiation) Symbol Parameter ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current IDM @ TC = 25°C Pulsed Drain Current 1 PD @ TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current 1 Repetitive Avalanche Energy 1 Peak Diode Reverse Recovery 3 TJ Operating Junction and TSTG Storage Temperature Range Lead Temperature Weight Value 14 9.0 56 75 0.60 ± 20 160 14 7.5 5.5 -55 to +150 300 (for 5sec) 2.6 (Typical) Unit A A A W W/°C V mJ A .


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