Document
IRHN7130
Radiation Hardened Power MOSFET Surface-Mount (SMD-1) 100V, 14A, N-channel, Rad Hard HEXFET™ Technology
PD-90821D
Features
Single event effect (SEE) hardened Low RDS(on) Low total gate charge Proton tolerant Simple drive requirements Hermetically sealed Ceramic package Light weight ESD rating: Class 1C per MIL-STD-750, Method 1020
Product Summary
BVDSS: 100V ID : 14A RDS(on),max : 180m QG,max : 45nC
Potential Applications
DC-DC converter Motor drives
SMD-1
Product Validation
Qualified according to MIL-PRF-19500 for space applications
Description
IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters.
Ordering Information
Table 1
Ordering options
Part number
Package
IRHN7130
SMD-1
IRHN3130
SMD-1
IRHN4130
SMD-1
Screening Level COTS COTS COTS
TID Level 100 krad(Si) 300 krad(Si) 500 krad(Si)
Please read the Important Notice and Warnings at the end of this document
www.infineon.com/irhirel
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2022-05-24
IRHN7130
Radiation Hardened Power MOSFET Surface Mount (SMD-1) Table of contents
Table of contents
Features ........................................................................................................................................ 1
Potential Applications..................................................................................................................... 1
Product Validation .......................................................................................................................... 1
Description .................................................................................................................................... 1
Ordering Information...................................................................................................................... 1
Table of contents ............................................................................................................................ 2
1 Absolute Maximum Ratings ..................................................................................................... 3
2 Device Characteristics ............................................................................................................ 4
2.1
Electrical Characteristics (Pre-Irradiation).............................................................................................4
2.2
Source-Drain Diode Ratings and Characteristics (Pre-Irradiation) ....................................................... 5
2.3
Thermal Characteristics .......................................................................................................................... 5
2.4
Radiation Characteristics........................................................................................................................5
2.4.1
Electrical Characteristics — Post Total Dose Irradiation .................................................................. 5
2.4.2
Single Event Effects — Safe Operating Area......................................................................................6
3 Electrical Characteristics Curves (Pre-irradiation) ..................................................................... 7
4 Test Circuits (Pre-irradiation) .................................................................................................10
5 Package Outline....................................................................................................................11
Revision history.............................................................................................................................12
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IRHN7130
Radiation Hardened Power MOSFET Surface Mount (SMD-1) Absolute Maximum Ratings
1
Absolute Maximum Ratings
Table 2
Absolute Maximum Ratings (Pre-Irradiation)
Symbol
Parameter
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM @ TC = 25°C
Pulsed Drain Current 1
PD @ TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current 1 Repetitive Avalanche Energy 1 Peak Diode Reverse Recovery 3
TJ
Operating Junction and
TSTG
Storage Temperature Range
Lead Temperature
Weight
Value 14 9.0 56 75 0.60 ± 20 160 14 7.5 5.5
-55 to +150
300 (for 5sec) 2.6 (Typical)
Unit A A A W W/°C V mJ A .