HSD276A

www.DataSheet4U.com HSD276A Silicon Schottky Barrier Diode for Detector ADE-208-1385 (Z) Rev.0 Jul. 2001 Features High forward current, Low capacitance. Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. HSD276A Laser Mark S2 Package Code SFP Outline Cathode mark Mark 1 S2 2 1. Cathode 2. Anode DataSheet 4 U .com www.DataSheet4U.com HSD276A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value 5 3 30 125 −55 to +125 Unit V V mA °C °C Repetitive peak reverse voltage VRRM Reverse voltage Average rectified current Junction temperature Storage temperature VR IO Tj Tstg Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability * 1 Symbol VR IR IF C  Min 3  35  30 Typ      Max  50  0.85  Unit V µA mA pF V Test Condition IR = 1 mA VR = 0.5V VF = 0.5 V VR = 0.5 V, f = 1 MHz C = 200 pF, R = 0 Ω , Both forward and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 µA at VR = 0.5 V 2. Please do not use the soldering iron due to avoid high stress to the SFP package. Rev.0, Jul. 2001, page 2 of 5 DataSheet 4 U .com www.DataSheet4U.com HSD276A Main Characteristic 10-1 10-2 (A) Forward current IF Reverse current IR (A) Ta = 75°C 10-2 10-3 10-3 10-4 Ta = 75°C 10-4 Ta = 25°C 10-5 Ta = 25°C 10-5 0 0.2 0.4 0.6 0.8 1.0 10-6 0 1.0 2.0 3.0 4.0 5.0 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage...