STB1132

www.DataSheet4U.com Semiconductor STB1132 PNP Silicon Transistor Description Medium power amplifier Features PC(Collector dissipation)=2W(Ceramic substate of 40×40×0.8mm used) Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) Complementary pair with STD1664 Ordering Information Type NO. STB1132 Marking A1 : hFE rank, monthly code Package Code SOT-89 Outline Dimensions 4.0 0.50±0.1 2.5 -0.3 +0.5 unit : mm -0.3 +0.2 1.00±0.3 3 1.82±0.05 -0.1 +0.2 2 0.52±0.05 0.15 Typ. 4.5 1 0.42±0.05 1.5 -0.1 +0.2 0~0.1 -0.02 +0.04 PIN Connections 1. Base 2. Collector 3. Emitter KST-8001-002 0.42 1 DataSheet 4 U .com www.DataSheet4U.com STB1132 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature * : When mounted on 40×40×0.8mm ceramic substate (Ta=25°C) Symbol VCBO VCEO VEBO IC PC PC * Ratings -40 -32 -5 -1 0.5 2 150 -55~150 Unit V V V A W °C °C Tj Tstg Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO hFE* VCE(sat) fT Cob Test Condition IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-20V, IE=0 VC...