Document
www.DataSheet4U.com
HiPerFETTM Power MOSFETs
Single MOSFET Die IXFK/IXFX 26N90 IXFK/IXFX 25N90
VDSS
IDSS RDS(on)
trr
900 V 26 A 0.30 W 250 ns 900 V 25 A 0.33 W 250 ns
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C 26N90 25N90 26N90 25N90 26N90 25N90
Maximum Ratings 900 900 ±20 ±30 26 25 104 100 26 25 64 3 5 560 -55 ... +150 150 -55 ... +150 V V V V A
PLUS 247TM (IXFX)
G D S
(TAB)
TO-264 AA (IXFK) A A
G D
(TAB)
S
mJ J V/ns W °C °C °C °C Nm/lb.in. 6 10 g g
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions 0.4/6
300
Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls Advantages • PLUS 247TM package for clip or spring mounting • Space savings • High power density
Symbol
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 3.0 TJ = 25°C TJ = 125°C 26N90 25N90 5.0 ±200 100 2 0.3 0.33 V V nA mA mA W W
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = 0.8 •VDSS VGS = 0 V VGS = 10 V, ID = 0.5 • ID25 Note 1
IXYS reserves the right to change limits, test conditions, and dimensions.
98553D (9/99)
© 2000 IXYS All rights reserved
1-4
DataSheet 4 U .com
www.DataSheet4U.com
IXFK 25N90 IXFX 25N90 IXFK 26N90 IXFX 26N90
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 18 28 8.7 VGS = 0 V, VDS = 25 V, f = 1 MHz 800 300 60 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 W (External), 35 130 24 240 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 56 107 10.8 1000 375 S nF pF pF ns ns ns ns nC nC nC 0.22 K/W 0.15 K/W
Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190
PLUS247TM (IXFX) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 • ID25
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 26N90 25N90 26N90 25N90 26 25 104 100 1.5 250 1.4 10 A
TO-264 AA (IXFK) Outline A V ns mC A
IF = IS, -di/dt = 100 A/ms, VR = 100 V
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
DataSheet 4 U .com
www.DataSheet4U.com
IXFK 25N90 IXFX 25N90 IXFK 26N90 IXFX 25N90
Figure 1. Output Characteristics at 25OC
20
TJ = 25°C VGS = 9V 8V 7V
Figure 2. Extended Output Characteristics at 125OC
50 40
TJ = 25°C VGS = 9V 8V 7V
6V
15
ID - Amperes
ID - Amperes
6V 5V
30 20
5V
10
5
4V
10
4V
0 0 2 4 6 8 10
0
0
4
8
12
16
20
VDS - Volts
VCE - Volts
Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID
30
TJ = 125°C VGS = 9V 8V 7V
Figure 4. Admittance Curves
30 25
25
6V
ID - Amperes
20 15 10 5 0 0 5 10 15 20
ID - Amperes
5V
20
TJ = 125OC
15
TJ = 25OC
10 5 0
4V
25
2
3
4
5
6
7
VDS - Volts
VGS - Volts
Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID
2.4 2.2 RDS(ON) - Normalized RDS(ON) - Normalized 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 30 40 50
TJ = 25°C TJ = 125°C VGS = 10V
Figure 6. RDS(on) normalized to 0.5 ID25 value vs. TJ
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 25 50 75 100 125 150
ID = 13A VGS = 10V
ID = 26A
ID - Amperes
TJ - Degrees C
© 2000 IXYS All rights reserv.