IXFH40N50Q2

HiPerFETTM Power MOSFETs Q2-Class IXFH40N50Q2 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr VDSS = 500V ID25 = 40A RDS(on) ≤ 160mΩ trr ≤ 250ns TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.063 in) from case for 10s Mounting torque Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) VGS = 0V, ID = 250μA VDS = VGS, ID = 4mA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Maximum Ratings 500 V 500 V ±30 V ±40 V 40 A 160 A 40 A 2.5 J 20 V/ns 560 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in. 6 g Characteristic Values Min. Typ. Max. 500 V 3.0 5.5 V ±200 nA 25 μA 1 mA 160 mΩ G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features Double metal process for low gate resistance International standard package Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier Applications DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages Easy to mount Space savings High power density © 2008 IXYS CO...