Power MOSFET
HiPerFETTM Power MOSFETs Q2-Class
IXFH40N50Q2
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg Low intri...
Description
HiPerFETTM Power MOSFETs Q2-Class
IXFH40N50Q2
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr
VDSS = 500V
ID25
= 40A
RDS(on) ≤ 160mΩ
trr
≤ 250ns
TO-247 (IXFH)
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt
PD TJ TJM Tstg TL Md
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.063 in) from case for 10s Mounting torque
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS VGS(th)
VGS = 0V, ID = 250μA VDS = VGS, ID = 4mA
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Maximum Ratings
500
V
500
V
±30
V
±40
V
40
A
160
A
40
A
2.5
J
20
V/ns
560
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
Characteristic Values Min. Typ. Max.
500
V
3.0
5.5 V
±200 nA
25 μA 1 mA
160 mΩ
G D S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features
Double metal process for low gate resistance International standard package Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier
Applications
DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers
Advantages
Easy to mount Space savings High power density
© 2008 IXYS CO...
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