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SVC201SPA

Sanyo Semicon Device

Varactor Diode

www.DataSheet4U.com Ordering number :EN501H SVC201SPA, 201Y Duffused Junctions Type Sillicon Diode Varactor Diode (IOC...


Sanyo Semicon Device

SVC201SPA

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Description
www.DataSheet4U.com Ordering number :EN501H SVC201SPA, 201Y Duffused Junctions Type Sillicon Diode Varactor Diode (IOCAP) for FM Receiver Electronic Tuning Features · The SVC201SPA, 201Y are varactor diodes of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in FM receiver electronic tuning applications. · Capable of being operated from a low voltage (Voltage range:1 to 9V) · High Q · High Capacitance raito · Uniform capacistance-voltage characteristic provided diode to be used in combination. Package Dimensions unit:mm 1184 [SVC201SPA] C:Cathode A:Anode SANYO:SPA unit:mm 1010A [SVC201Y] C:Cathode A:Anode Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Voltage Junction Temperature Storage Temperature Symbol VR Tj Tstg Conditions Ratings –16 100 –55 to +100 Unit V ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Breakdown Voltage Reverse Current Interterminal Capacitance Symbol V(BR)R IR C1.6V C3.5V C5.0V C7.5V Capacitance Raito Series Resistance Matching Tolerance CR rs ∆Cm IR=–10µA VR=–9V VR=–1.6V, f=1MHz VR=–3.5V, f=1MHz VR=–5.0V, f=1MHz VR=–7.5V, f=1MHz C1.6V/C7.5V f=50MHz ,VR=–1V (Cmax–Cmin)/Cmin 28.19 19.04 14.48 10.17 2.2 Conditions Ratings min –16 –50 37.45 24.33 18.49 12.99 3.7 0.6 0.05 Ω typ max Unit V nA pF pF pF pF SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 33098HA (KT)/5119MO/...




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