NTJD4105C

www.DataSheet4U.com NTJD4105C Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88 Features Complementary N and P Channel Device Leading −8.0 V Trench for Low RDS(on) Performance ESD Protected Gate − ESD Rating: Class 1 SC−88 Package for Small Footprint (2 x 2 mm) Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish DC−DC Conversion Load/Power Switching Single or Dual Cell Li−Ion Battery Supplied Devices Cell Phones, MP3s, Digital Cameras, PDAs Parameter Symbol N−Ch P−Ch N−Ch P−Ch N−Ch C P−Ch C N−Ch C P−Ch C TA=25°C TA=85°C TA=25°C TA=85°C TA=25°C TA=85°C TA=25°C TA=85°C tp≤10 ms TA=25°C TA=85°C TA=25°C TA=85°C TJ, TSTG IS TL IDM PD VDSS VGS ID Value 20 −8.0 ±12 ±8.0 0.63 0.46 −0.775 −0.558 0.91 0.65 −1.1 −0.8 ±1.2 0.27 0.14 0.55 0.29 −55 to 150 0.63 −0.775 260 °C °C A A W A V Unit V http://onsemi.com V(BR)DSS N−Ch 20 V RDS(on) TYP 0.29 W @ 4.5 V 0.36 W @ 2.5 V 0.22 W @ −4.5 V ID MAX 0.63 A Applications P−Ch −8.0 V 0.32 W @ −2.5 V 0.51 W @ −1.8 V −0.775 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Drain−to−Source a o Sou ce Voltage o age Gate−to−Source Ga e o Sou ce Voltage o age Continuous Co uous Drain a Current Cu e St d State St t − Steady (Based on RqJA) S1 SOT−363 SC−88 (6−LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View 6 1 Co Continuous uous Drain a Current Cu e − Steady St d State St t (Based on RqJL) Pulsed Drain Current Power o e Dissipation ss a o − S Steady eady S State ae...