HY5DS573222FP

www.DataSheet4U.com HY5DS573222F(P) 256M(8Mx32) GDDR SDRAM HY5DS573222F(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Feb. 2005 1 DataSheet 4 U .com www.DataSheet4U.com 1HY5DS573222F(P) Revision History No. 0.1 0.2 0.3 0.4 0.5 1.0 Defined Target Spec. Supports Lead free parts for each speed grade CL, AC parameter, IDD5 change CL, tCK_max, tRAS, tDAL change & Comment of DLL_off condition 1) Changed IDD & VDD_max 2) Changed tRCDWR, tWR, CL, tCK_max at 350Mhz speed bin Version 1.0 Release History Draft Date Mar. 2004 Apr. 2004 Apr. 2004 Jun. 2004 Oct. 2004 Feb. 2005 Remark Rev. 1.0 / Feb. 2005 2 DataSheet 4 U .com www.DataSheet4U.com 1HY5DS573222F(P) DESCRIPTION The Hynix HY5DS573222 is a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which requires high bandwidth. The Hynix 8Mx32 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible wit...