DatasheetsPDF.com

IRHMS64260 Dataheets PDF



Part Number IRHMS64260
Manufacturers International Rectifier
Logo International Rectifier
Description (IRHMS6x260) RADIATION HARDENED POWER MOSFET THRU-HOLE
Datasheet IRHMS64260 DatasheetIRHMS64260 Datasheet (PDF)

www.DataSheet4U.com PD - 94667A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) IRHMS63260 IRHMS64260 300K Rads (Si) 600K Rads (Si) RDS(on) 0.029Ω 0.029Ω 0.029Ω ID 45A* 45A* 45A* 45A* IRHMS67260 200V, N-CHANNEL TECHNOLOGY IRHMS68260 1000K Rads (Si) 0.029Ω International Rectifier’s R6 TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Ef.

  IRHMS64260   IRHMS64260


Document
www.DataSheet4U.com PD - 94667A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) IRHMS63260 IRHMS64260 300K Rads (Si) 600K Rads (Si) RDS(on) 0.029Ω 0.029Ω 0.029Ω ID 45A* 45A* 45A* 45A* IRHMS67260 200V, N-CHANNEL TECHNOLOGY IRHMS68260 1000K Rads (Si) 0.029Ω International Rectifier’s R6 TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. Low-Ohmic TO-254AA Features: n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 45* 35 180 208 1.67 ±20 344 45 20.8 5.4 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 (0.063 in. /1.6 mm from case for 10s) 9.3 (Typical) g www.irf.com 1 10/07/03 DataSheet 4 U .com www.DataSheet4U.com IRHMS67260 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 200 — — 2.0 40 — — — — — — — — — — — — Typ Max Units — 0.21 — — — — — — — — — — — — — — 6.8 — — 0.029 4.0 — 10 25 100 -100 240 65 60 40 60 70 30 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 35A ➃ VDS = VGS, I D = 1.0mA VDS = 25V, IDS = 35A ➃ VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 45A VDS = 100V VDD = 100V, ID = 45A VGS =12V, RG = 2.35Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance — — — — 8045 953 14 1.1 — — — — pF Ω VGS = 0V, VDS = 25V f = 100KHz f = 0.73MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 45* 180 1.2 640 10.5 Test Conditions A V ns µC Tj = 25°C, IS = 45A, VGS = 0V ➃ Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs VDD ≤ 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.60 0.21 — — 48 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com DataSheet 4 U .com www.DataSheet4U.com Radiation Characteristics Pre-Irradiation IRHMS67260 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter B.


IXFT80N15Q IRHMS64260 IRHMS68260


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)