NTP30N20

NTP30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 Features Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Pb−Free Package is Available* Applications PWM Motor Controls Power Supplies Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA 25°C − Continuous @ TA 100°C − Pulsed (Note 1) Total Power Dissipation @ TA = 25°C Derate above 25°C VDSS VDGR VGS VGSM ID ID IDM PD 200 200 "30 "40 30 22 90 214 1.43 Vdc Vdc Vdc Adc W W/°C Operating and Storage Temperature Range TJ, Tstg − 55 to °C +175 Single Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL(pk) = 20 A, L = 3.0 mH, RG = 25 W) Thermal Resistance − Junction−to−Case − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds EAS RqJC RqJA TL mJ 450 °C/W 0.7 62.5 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 10 ms,...