STB210NF02-1

www.DataSheet4U.com N-CHANNEL 20V - 0.0026 Ω - 120A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET TYPE STB210NF02/-1 STP210NF02 s s s STP210NF02 STB210NF02 STB210NF02-1 AUTOMOTIVE SPECIFIC VDSS 20 V 20 V RDS(on) <0.0032 Ω <0.0032 Ω ID 120 A(**) 120 A(**) 3 1 TYPICAL RDS(on) = 0.0026Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED 3 12 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D²PAK TO-263 I²PAK TO-262 3 1 2 TO-220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS INTERNAL SCHEMATIC DIAGRAM Ordering Information SALES TYPE STB210NF02 STB210NF02T4 STP210NF02 STB210NF02-1 MARKING B210NF02 B210NF02 P210NF02 B210NF02 PACKAGE D2PAK D2PAK TO-220 I2PAK PACKAGING TUBE TAPE & REEL TUBE TUBE ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) VDGR VGS Gate- source Voltage Drain Current (continuous) at TC = 25°C ID(**) Drain Current (continuous) at TC = 100°C ID IDM() Drain Current (pulsed) Ptot Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope dv/dt (1) EAS (2) Single Pulse Avalanche Energy Tstg Storage Tempera...