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2SK3236
TOSHIBA Field Effect TransistorSilicon N Channel MOS Type (U-MOSII)
2SK3236
Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
· · · · · 4 V gate drive Low drain-source ON resistance: RDS (ON) = 13. 5 mΩ (typ. ) High forward transfer admittance: |Yfs| = 42 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 60 V) Enhancement-model: Vth = 1. 3~2. 5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 35 10...