MCH3443

www.DataSheet4U.com Ordering number : ENN7531 MCH3443 N-Channel Silicon MOSFET MCH3443 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2167A [MCH3443] 0.25 Low ON-resinstance. Ultrahigh-speed switching. 2.5V drive. 0.3 0.15 3 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 1 : Gate 2 : Source 3 : Drain 1 2 (Top view) 0.85 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) SANYO : MCPH3 DataSheet4U.com Conditions Ratings 30 ±12 1.5 6 0.8 150 --55 to +150 Unit V V A A W °C °C DataShee Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=800mA ID=800mA, VGS=4V ID=400mA, VGS=2.5V Ratings min 30 1 ±10 0.4 1.3 2.2 165 210 215 295 1.3 typ max Unit V µA µA V S mΩ mΩ Marking : ZU Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of...