UPA1874

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1874 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1874 is a switching device which can be driven directly by a 2.5-V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit: mm) 5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2 1.2 MAX. 1.0±0.05 0.25 ° 3° +5 –3° FEATURES 2.5-V drive available Low on-state resistance 1 4 RDS(on)1 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)2 = 14.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) RDS(on)3 = 16.5 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A) 3.15 ±0.15 RDS(on)4 = 19.5 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A) 3.0 ±0.1 DataSheet4U.com Built-in G-S protection diode against ESD 0.1±0.05 0.5 0.6 +0.15 –0.1 6.4 ±0.2 0.145 ±0.055 DataShee 1.0 ±0.2 4.4 ±0.1 ORDERING INFORMATION PART NUMBER PACKAGE Power TSSOP8 0.65 0.27 +0.03 –0.08 0.8 MAX. 0.10 M 0.1 µ PA1874GR-9JG ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note 1 Note 2 EQUIVALENT CIRCUIT 30 ±12 ±8.0 ±80 2.0 150 V V A A W °C °C Gate1 Gate Protection Diode Source1 Drain1 Drain2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Body Diode Gate2 Gate Protection Diode Source2 Body Diode Total Power Dissipation (2 unit) Channel...