UPA1870B

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1870B N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1870B is a switching device which can be driven directly by a 2.5 V power source. The µPA1870B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit: mm) 5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2 1.2 MAX. 1.0±0.05 0.25 ° 3° +5 –3° FEATURES 2.5 V drive available Low on-state resistance RDS(on)1 = 16.0 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 16.5 mΩ TYP. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 20.0 mΩ TYP. (VGS = 2.5 V, ID = 3.0 A) Built-in G-S protection diode against ESD 1 4 0.1±0.05 0.5 0.6 +0.15 –0.1 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 6.4 ±0.2 4.4 ±0.1 1.0 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE DataShee 0.1 DataSheet4U.com 0.65 0.27 +0.03 –0.08 0.8 MAX. 0.10 M µ PA1870BGR-9JG Power TSSOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Note 1 Note 2 Note 1 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 2 20.0 ±12.0 ±6.0 ±80.0 2.0 150 –55 to +150 V V EQUIVALENT CIRCUIT Drain1 Drain2 A A W °C °C Gate1 Gate Protection Diode Source1 Body Diode Gate2 Gate Protection Diode Source2 Body Diode Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature N...