TBB1010

www.DataSheet4U.com TBB1010 Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier ADE-208-1607B (Z) 3rd. Edition Feb. 2003 Features Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS ×2 Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, DataShee Rs = 0 conditions. Provide mini mold packages; CMPAK-6 DataSheet4U.com Outline CMPAK-6 6 5 4 2 1 3 1. Drain(1) 2. Source 3. Drain(2) 4. Gate-1(2) 5. Gate-2 6. Gate-1(1) Notes: 1. 2. Marking is “KM”. TBB1010 is individual type number of HITACHI TWIN BBFET. DataSheet4U.com www.DataSheet4U.com TBB1010 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg *3 Ratings 6 +6 -0 +6 -0 30 250 150 –55 to +150 Unit V V V mA mW °C °C Notes: 3. Value on the glass epoxy board (50mm × 40mm × 1mm). et4U.com DataShee DataSheet4U.com DataSheet4U.com Rev.2, Feb. 2003, page 2 of 10 www.DataSheet4U.com TBB1010 Electrical Characteristics (Ta = 25°C) The below specification are applicable for FET1 and FET2 unit Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to so...