NTQD6968N

NTQD6968N Power MOSFET 7.0 A, 20 V, Common Drain, Dual N−Channel, TSSOP−8 Features Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive 3 mm Wide TSSOP−8 Surface Mount Package High Speed, Soft Recovery Diode TSSOP−8 Mounting Information Provided Pb−Free Package is Available Applications Battery Protection Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA 25°C (Note 1) − Continuous @ TA 70°C (Note 1) − Pulsed (Note 3) Total Power Dissipation @ TA 25°C (Note 1) Drain Current − Continuous @ TA 25°C (Note 2) − Continuous @ TA 70°C (Note 2) − Pulsed (Note 3) Total Power Dissipation @ TA 25°C (Note 2) Operating and Storage Temperature Range VDSS 20 Vdc VGS "12 Vdc Adc ID 7.0 ID 5.6 IDM 20 PD 1.81 W Adc ID 6.2 ID 4.9 IDM 18 PD 1.39 W TJ, Tstg − 55 to °C +150 Thermal Resistance − Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) RqJA °C/W 69 90 Maximum Lead Temperature for Soldering Pur- TL poses for 10 seconds 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided...