M58LR128FB

www.DataSheet4U.com M58LR128FT M58LR128FB 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE Figure 1. Package – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program (12V tolerant) SYNCHRONOUS / ASYNCHRONOUS READ FBGA – Synchronous Burst Read mode: 54MHz – Asynchronous Page Read mode – Random Access: 85, 95ns SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME – 10µs typical Word program time using Buffer Program VFBGA56 (ZB) MEMORY ORGANIZATION 7.7 x 9mm – Multiple Bank Memory Array: 8 Mbit Banks DataSheet4U.com – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS ■ ELECTRONIC SIGNATURE – program/erase in one Bank while read in – Manufacturer Code: 20h others – Top Device Code: 88C4h. – No delay between read and write – Bottom Device Code: 88C5h operations BLOCK LOCKING – All blocks locked at power-up – Any combination of blocks can be locked with zero latency – WP for Block Lock-Down – Absolute Write Protection with VPP = VSS SECURITY – 64 bit unique device number – 2112 bit user programmable OTP Cells COMMON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK DataSh ee September 2004 1/82 DataSheet4U.com www.DataSheet4U.com M58LR128FT, M58LR128FB TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figu...