M36P0R9060E0

www.DataSheet4U.com M36P0R9060E0 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory – 1 die of 64 Mbit (4Mb x16) PSRAM Supply voltage – VDDF = VCCP = VDDQ = 1.7 to 1.95V – VPPF = 9V for fast program Electronic signature – Manufacturer Code: 20h – Device Code: 8819 ECOPACK® package Synchronous / asynchronous read – Synchronous Burst Read mode: 108MHz, 66MHz – Asynchronous Page Read mode – Random Access: 96ns ■ FBGA ■ TFBGA107 (ZAC) ■ ■ Flash memory ■ Block locking – All Blocks locked at power-up – Any combination of Blocks can be locked with zero latency – WPF for Block Lock-Down – Absolute Write Protection with VPPF = VSS PSRAM ■ ■ User-selectable operating modes DataSheet4U.com – Asynchronous modes: Random Read, and Write, Page Read – Synchronous modes: NOR-Flash, Full Programming time Synchronous (Burst Read and Write) – 4.2µs typical Word program time using ■ Asynchronous Random Read Buffer Enhanced Factory Program – Access time: 70ns command DataShee ■ Memory organization – Multiple Bank memory array: 64 Mbit banks – Four Extended Flash Array (EFA) Blocks of 64 Kbits Dual operations – program/erase in one Bank while read in others – No delay between read and write operations Security – 64 bit unique device number – 2112 bit user programmable OTP Cells 100,000 Program/erase cyc...